VS-GB75YF120N by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. VS-GB75YF120N

Lifecycle status
EOL
RoHS
RoHS compliant
Description
IGBT MOD 1200V 100A ECONO2 4PACK
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X22
Configuration
2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
22
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
480
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
240
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
529
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED