VQ1001J-1
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDIP-T14
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals14
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.83 A
- Turn-on Time-Max (ton)30 ns
- Feedback Cap-Max (Crss)35 pF
- DS Breakdown Voltage-Min30 V
- Turn-off Time-Max (toff)30 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1 ohm
- Pulsed Drain Current-Max (IDM)3 A
0 suppliers available to buy or to bid for VQ1001J-1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
VQ1001J-1
Send an RFQ
VQ1001J-1