VQ1000P-2
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDIP-T14
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals14
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.225 A
- Turn-on Time-Max (ton)10 ns
- Feedback Cap-Max (Crss)5 pF
- DS Breakdown Voltage-Min60 V
- Turn-off Time-Max (toff)10 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max5.5 ohm
- Pulsed Drain Current-Max (IDM)1 A
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VQ1000P-2
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VQ1000P-2