VQ1000P
SILICONIX INC
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 0.225A I(D), N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2
- Drain Current-Max (ID) (A)0.225
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VQ1000P
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VQ1000P