VP3203N3-GP013 by Supertex, Inc. | Sourcengine

Supertex, Inc. VP3203N3-GP013

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 0.65A I(D), 30V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-92
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Additional Feature
HIGH INPUT IMPEDANCE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.74
Drain Current-Max (ID) (A)
0.65
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
60
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
0.74
Drain-source On Resistance-Max (ohm)
0.6