VP0300B-2
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 1.25A I(D), 30V, 2.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AD
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)1.25 A
- Turn-on Time-Max (ton)30 ns
- Feedback Cap-Max (Crss)60 pF
- DS Breakdown Voltage-Min30 V
- Turn-off Time-Max (toff)30 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max2.5 ohm
- Pulsed Drain Current-Max (IDM)3 A
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VP0300B-2
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VP0300B-2