VN3205P-G
Supertex, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-001
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDIP-T14
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-001
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureHIGH INPUT IMPEDANCE
- Number of Elements4
- Number of Terminals14
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)50
- Pulsed Drain Current-Max (IDM) (A)8
- Drain-source On Resistance-Max (ohm)0.3
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VN3205P-G