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VN2018BDI

VANGUARD SEMICONDUCTOR

VANGUARD SEMICONDUCTOR VN2018BDI
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.33.00.01
  • SB Code
    8542.33.00.00
  • Wideband
    YES
  • Low-Offset
    NO
  • Technology
    BICMOS
  • Architecture
    VOLTAGE-FEEDBACK
  • JESD-30 Code
    R-XDIP-T14
  • Package Code
    DIP
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Slew Rate-Min
    300 V/us
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Amplifier Type
    OPERATIONAL AMPLIFIER
  • Terminal Pitch
    2.54 mm
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Voltage Gain-Min
    1000
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    DUAL
  • Unity Gain BW-Nom
    200000 kHz
  • Number of Functions
    1
  • Number of Terminals
    14
  • Qualification Status
    Not Qualified
  • Package Body Material
    CERAMIC
  • Frequency Compensation
    YES
  • Input Offset Voltage-Max
    30000 uV
  • Package Equivalence Code
    DIP14,.3
  • Supply Voltage Limit-Max
    7 V
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -40 Cel
  • Supply Voltage-Nom (Vsup)
    5 V
  • Neg Supply Voltage-Nom (Vsup)
    -5 V

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VN2018BDI
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VN2018BDI