UTT12P10L-TM3-T
UTC, Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-251
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)125
- Drain Current-Max (ID) (A)12
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)95
- DS Breakdown Voltage-Min (V)100
- Turn-off Time-Max (toff) (ns)405
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)60
- Pulsed Drain Current-Max (IDM) (A)48
- Drain-source On Resistance-Max (ohm)0.2
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UTT12P10L-TM3-T