UTM4953G-H-S08-R by UTC, Ltd. | Sourcengine

UTC, Ltd. UTM4953G-H-S08-R

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
2.1
Drain Current-Max (ID) (A)
5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
27
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
64
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
0.055
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED