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UPG2311T5F-E2-A

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

NEC COMPOUND SEMICONDUCTOR DEVICES LTD UPG2311T5F-E2-A
  • Gain (dB)
    34
  • Construction
    COMPONENT
  • Input Power-Max (dBm)
    10
  • RF/Microwave Device Type
    NARROW BAND LOW POWER
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -45

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UPG2311T5F-E2-A
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UPG2311T5F-E2-A