UPG16N60EG-T3P-T by UTC, Ltd. | Sourcengine

UTC, Ltd. UPG16N60EG-T3P-T

Lifecycle status
Active
Description
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
180
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
130.6
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
182
Collector Current-Max (IC) (A)
32
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
600