UPD48576218F1-E18-DW1-A
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- Description576M-BIT Low Latency DRAM Common I/O
- Category
- ECCN5A002
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width11
- Length18.5
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B144
- Memory Width18
- Organization32MX18
- Package CodeTBGA
- Self RefreshNO
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density603979776 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Number of Ports1
- Number of Words33554432 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN BISMUTH
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH, TERM PITCH-MAX
- Supply Current-Max439 mA
- Number of Functions1
- Number of Terminals144
- Standby Current-Max0.25 Amp
- Number of Words Code32M
- Package Body MaterialPLASTIC/EPOXY
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA144,12X18,40/32
- Operating Temperature-Max95 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)533 MHz
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UPD48576218F1-E18-DW1-A