UPD45D128164G5-C75-9LG
Renesas Electronics Corp.
- Lifecycle statusTransferred
- DescriptionDDR1 DRAM, 8MX16, 0.75ns, CMOS, PDSO66
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Package CodeTSSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeDDR1 DRAM
- Refresh Cycles4096
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization8MX16
- Number of Terminals66
- Terminal Pitch (mm)0.635
- Access Time-Max (ns)0.75
- Number of Words Code8M
- Memory Density (bits)134217728
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)2.5
- Number of Words (words)8388608
- Sequential Burst Length2,4,8
- Standby Current-Max (A)0.01
- Supply Current-Max (mA)270
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Clock Frequency-Max (MHz)133
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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UPD45D128164G5-C75-9LG