UPA831TFFB by NEC COMPOUND SEMICONDUCTOR DEVICES LTD | Sourcengine

NEC COMPOUND SEMICONDUCTOR DEVICES LTD UPA831TFFB

Lifecycle status
Discontinued
Description
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e6
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
100
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.065
Collector-emitter Voltage-Max (V)
10
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
0.9
Transition Frequency-Nom (fT) (MHz)
7000
Time@Peak Reflow Temperature-Max (s)
10