UPA2732UT1A-E1-AZ
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSwitching N-Channel Power MOSFET
- Category
- ECCN5A002
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN BISMUTH
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)40 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)4.6 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)40 mJ
- Drain-source On Resistance-Max0.0067 ohm
- Pulsed Drain Current-Max (IDM)160 A
- Width5
- Length5.4
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UPA2732UT1A-E1-AZ