UPA2719GR-E2-AT
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionSwitching N-Channel Power MOSFET
- Category
- ECCN5A002
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)2 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)10 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0255 ohm
- Pulsed Drain Current-Max (IDM)100 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Width4.4
- Length5.37
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UPA2719GR-E2-AT