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UPA2717AGR-E2-AT

Renesas Electronics Corp.

UPA2717AGR-E2-AT Datasheet
Renesas Electronics Corp. UPA2717AGR-E2-AT
  • ECCN
    5A002
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    8
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (ID)
    15 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30 V
  • Operating Temperature-Max
    150 Cel
  • Power Dissipation-Max (Abs)
    2 W
  • Transistor Element Material
    SILICON
  • Avalanche Energy Rating (Eas)
    22.5 mJ
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.0104 ohm
  • Pulsed Drain Current-Max (IDM)
    150 A
  • Width
    4.4
  • Length
    5.37

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UPA2717AGR-E2-AT