UPA2510TM
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 18A I(D), 30V, 14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCN5A002
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)18 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)32.4 mJ
- Drain-source On Resistance-Max14 ohm
- Pulsed Drain Current-Max (IDM)72 A
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UPA2510TM