UPA2351BT1P-E4-A
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionN-Channel Mos Field Effect Transistor For Switching
- Category
- ECCN5A002
- ECCN GovernanceEAR
- JESD-30 CodeS-PBGA-B4
- ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Codee6
- Package ShapeSQUARE
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN BISMUTH
- Terminal PositionBOTTOM
- Number of Elements2
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)1.3 W
- Transistor Element MaterialSILICON
- Width1.62
- Length1.62
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UPA2351BT1P-E4-A