UPA1802GR-9JG by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. UPA1802GR-9JG

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 7A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
28
Drain-source On Resistance-Max (ohm)
0.032