UPA1709G by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. UPA1709G

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 9A I(D), 40V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.02 ohm
Pulsed Drain Current-Max (IDM)
36 A