UML10
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-XRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)25
- Power Dissipation-Max (W)27
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1.1
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)33
- Collector-base Capacitance-Max (pF)15
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UML10