UG5N120L-T3N-T by UTC, Ltd. | Sourcengine

UTC, Ltd. UG5N120L-T3N-T

Lifecycle status
Active-Unconfirmed
Description
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.7
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
201
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
580
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
440
Collector Current-Max (IC) (A)
21
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
1200