UF2801KI
M/A-COM INC
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-39
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Power Gain-Min (Gp)10 dB
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.7 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)1.2 pF
- DS Breakdown Voltage-Min65 V
- Operating Temperature-Max200 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max5.1 W
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UF2801KI