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TSM60NB600CHC5G

Taiwan Semiconductor

Taiwan Semiconductor TSM60NB600CHC5G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSIP-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-251
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    7 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    600 V
  • Transistor Element Material
    SILICON
  • Avalanche Energy Rating (Eas)
    36 mJ
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.6 ohm
  • Pulsed Drain Current-Max (IDM)
    21 A
  • Time@Peak Reflow Temperature-Max (s)
    10

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TSM60NB600CHC5G
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TSM60NB600CHC5G