TSM480P06CHX0G
Taiwan Semiconductor
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-251
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)40
- Drain Current-Max (ID) (A)20
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)65
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-50
- Avalanche Energy Rating (Eas) (mJ)51
- Pulsed Drain Current-Max (IDM) (A)64
- Drain-source On Resistance-Max (ohm)0.048
- Time@Peak Reflow Temperature-Max (s)10
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TSM480P06CHX0G