TSM3442CX6RFG
Taiwan Semiconductor
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 4A I(D), 20V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)33 pF
- DS Breakdown Voltage-Min20 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Moisture Sensitivity Level3
- Power Dissipation-Max (Abs)1.25 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.07 ohm
- Pulsed Drain Current-Max (IDM)8 A
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TSM3442CX6RFG
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TSM3442CX6RFG