TPS1110D by Texas Instruments Incorporated | Sourcengine

Texas Instruments Incorporated TPS1110D

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 6A I(D), 7V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
6 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
37 ns
DS Breakdown Voltage-Min
7 V
Turn-off Time-Max (toff)
36 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.075 ohm
Pulsed Drain Current-Max (IDM)
24 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED