TPM4130
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-CDFM-F6
- ConfigurationCOMMON EMITTER, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal PositionDUAL
- Additional FeatureDIFFUSED BALLAST RESISTORS
- Number of Elements2
- Number of Terminals6
- Power Gain-Min (Gp)7.2 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)210 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max30 V
- Power Dissipation Ambient-Max210 W
- Collector-base Capacitance-Max70 pF
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TPM4130
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TPM4130