TPIC5401DWR by Texas Instruments Incorporated | Sourcengine

Texas Instruments Incorporated TPIC5401DWR

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-013AC
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G20
Configuration
COMPLEX
JEDEC-95 Code
MS-013AC
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
ESD PROTECTED
Number of Elements
4
Number of Terminals
20
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.7 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
95 ns
Feedback Cap-Max (Crss)
125 pF
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
130 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
21 mJ
Power Dissipation Ambient-Max
1.389 W
Drain-source On Resistance-Max
0.35 ohm
Pulsed Drain Current-Max (IDM)
10 A