TPIC3302DR
Texas Instruments Incorporated
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Field-Effect Transistor, 1A I(D), 60V, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G8
- ConfigurationCOMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionDUAL
- Number of Elements3
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)1 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)40 pF
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max0.95 W
- Drain-source On Resistance-Max0.475 ohm
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TPIC3302DR