TP2330
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal PositionRADIAL
- Additional FeatureDIFFUSED BALLAST RESISTORS
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)10 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)8 A
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max16 V
- Power Dissipation Ambient-Max80 W
- Collector-base Capacitance-Max100 pF
0 suppliers available to buy or to bid for TP2330
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
TP2330