TP2325
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal PositionRADIAL
- Additional FeatureDIFFUSED BALLAST RESISTORS
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)6.2 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)8 A
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max16 V
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TP2325
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TP2325