TP2314 by TRW RF DEVICES DIVISION | Sourcengine

TRW RF DEVICES DIVISION TP2314

Lifecycle status
Discontinued
Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
1
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
16
Collector-base Capacitance-Max (pF)
15