TM4EP64CJN-70
Texas Instruments Incorporated
- Lifecycle statusDiscontinued
- DescriptionEDO DRAM Module, 4MX72, 70ns, MOS, PDMA168
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Length133.35 mm
- I/O TypeCOMMON
- TechnologyMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-PDMA-N168
- Memory Width72
- Organization4MX72
- Package CodeDIMM
- Self RefreshNO
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density301989888 bit
- Memory IC TypeEDO DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch1.27 mm
- Access Time-Max70 ns
- Number of Ports1
- Number of Words4194304 words
- Terminal FinishGOLD
- Seated Height-Max25.53 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
- Supply Current-Max1280 mA
- Number of Functions1
- Number of Terminals168
- Standby Current-Max0.016 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM168
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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TM4EP64CJN-70