TIP141T
Samsung Semiconductor, Inc.
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)500
- Power Dissipation-Max (W)80
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)10
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)80
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TIP141T