THN6301EAA2
KODENSHI AUK CORP
- Lifecycle statusContact Mfr
- DescriptionRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Power Gain-Min (Gp)10 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)80
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.065 A
- Power Dissipation-Max (Abs)0.15 W
- Transistor Element MaterialSILICON GERMANIUM
- Collector-emitter Voltage-Max12 V
- Transition Frequency-Nom (fT)10000 MHz
- Collector-base Capacitance-Max0.55 pF
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THN6301EAA2