THN420ZBE1
KODENSHI AUK CORP
- Lifecycle statusContact Mfr
- DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon Germanium, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)14 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)50
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.035 A
- Power Dissipation-Max (Abs)0.16 W
- Transistor Element MaterialSILICON GERMANIUM
- Collector-emitter Voltage-Max4.5 V
- Power Dissipation Ambient-Max0.16 W
- Transition Frequency-Nom (fT)20000 MHz
- Collector-base Capacitance-Max0.24 pF
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THN420ZBE1