TGF2965-SM
Qorvo, Inc
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeS-PQCC-N16
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals16
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Drain Current-Max (ID) (A)0.6
- Transistor Element MaterialGALLIUM NITRIDE
- Operating Temperature-Max (Cel)275
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TGF2965-SM
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TGF2965-SM