TGF2933
Qorvo, Inc
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- Power Gain-Min (Gp) (dB)15
- Drain Current-Max (ID) (A)2
- Transistor Element MaterialGALLIUM NITRIDE
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
- Time@Peak Reflow Temperature-Max (s)30
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TGF2933
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TGF2933