TRIQUINT SEMICONDUCTOR INC TG2H214120-FL-T/R
  • VSWR-Max
    10
  • Gain (dB)
    16.2
  • Construction
    MODULE
  • RF/Microwave Device Type
    NARROW BAND HIGH POWER
  • Operating Frequency-Max (MHz)
    2170
  • Operating Frequency-Min (MHz)
    2110
  • Characteristic Impedance (ohm)
    50

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TG2H214120-FL-T/R
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TG2H214120-FL-T/R