TD1004YT2 by VISHAY SILICONIX | Sourcengine

VISHAY SILICONIX TD1004YT2

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 0.55A I(D), 60V, 2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.55 A
Transistor Application
AMPLIFIER
Turn-on Time-Max (ton)
20 ns
Feedback Cap-Max (Crss)
15 pF
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
20 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
2 ohm
Pulsed Drain Current-Max (IDM)
2 A