TBN4226USM2 by KODENSHI AUK CORP | Sourcengine

KODENSHI AUK CORP TBN4226USM2

Lifecycle status
Contact Mfr
Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
70
Power Dissipation-Max (W)
0.15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
8
Power Dissipation Ambient-Max (W)
0.15
Collector-base Capacitance-Max (pF)
1.4
Transition Frequency-Nom (fT) (MHz)
6000