TBL300N10-5DL8
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 30A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)78
- Drain Current-Max (ID) (A)30
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)107
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)30
- Pulsed Drain Current-Max (IDM) (A)120
- Drain-source On Resistance-Max (ohm)0.03
- Screening Level / Reference StandardAEC-Q101; MIL-STD-202
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TBL300N10-5DL8