TBL075N04-5DL8
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 54A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)38
- Drain Current-Max (ID) (A)54
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)189
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)78
- Pulsed Drain Current-Max (IDM) (A)216
- Drain-source On Resistance-Max (ohm)0.0075
- Screening Level / Reference StandardAEC-Q101; MIL-STD-202
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TBL075N04-5DL8