TBB1017SMTL-E
Renesas Electronics Corp.
- Lifecycle statusNRFND
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G6
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)15
- Drain Current-Max (ID) (A)0.03
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)6
0 suppliers available to buy or to bid for TBB1017SMTL-E
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
TBB1017SMTL-E
Send an RFQ
TBB1017SMTL-E