TBB1001
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Power Gain-Min (Gp)24 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.04 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.08 pF
- DS Breakdown Voltage-Min6 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.25 W
- Transistor Element MaterialSILICON
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TBB1001