- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max1 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)500 ns
- Turn-off Time-Max (toff)3800 ns
- DC Current Gain-Min (hFE)8
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)3 A
- Moisture Sensitivity Level2
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max800 V
- Peak Reflow Temperature (Cel)240
- Power Dissipation Ambient-Max80 W
- Transition Frequency-Nom (fT)8 MHz
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