T2G6001528-SG
Qorvo, Inc
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, P-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFP-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeP-CHANNEL
- Highest Frequency BandC BAND
- Drain Current-Max (ID) (A)5
- Transistor Element MaterialGALLIUM NITRIDE
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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T2G6001528-SG
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T2G6001528-SG